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  1. 1
    The Variation of Schottky Barrier Height Induced by the Phase Separation of InAlAs Layers on InP HEMT Devices

    The Variation of Schottky Barrier Height Induced by the Phase Separation of InAlAs Layers on InP HEMT Devices by Sang-Tae Lee, Minwoo Kong, Hyunchul Jang, Chang-Hun Song, Shinkeun Kim, Do-Young Yun, Hyeon-seok Jeong, Dae-Hyun Kim, Chan-Soo Shin, Kwang-Seok Seo

    Published 2022-07-01
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    Article
  2. 2
    Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors

    Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors by Hyeon-Bhin Jo, Jung-Ho Park, Seung-Woo Son, Ji-Min Baek, Do-Young Yun, Yeonsung Kang, Yong-Hyun Seo, Lee Min Yung, Jung-Hee Lee, Tae-Woo Kim, Dae-Hyun Kim

    Published 2018-07-01
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    Article

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