A Compact Model for Single-Event Transient in Fully Depleted Silicon on Insulator MOSFET Considering the Back-Gate Voltage Based on Time-Domain Components by Kewei Wang, Xinyi Zhang, Bo Li, Duoli Li, Fazhan Zhao, Jianhui Bu, Zhengsheng Han

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The ESD Characteristics of a pMOS-Triggered Bidirectional SCR in SOI BCD Technology by Mingzhu Li, Xiaowu Cai, Chuanbin Zeng, Xiaojing Li, Tao Ni, Juanjuan Wang, Duoli Li, Fazhan Zhao, Zhengsheng Han

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Applications of Direct-Current Current–Voltage Method to Total Ionizing Dose Radiation Characterization in SOI NMOSFETs with Different Process Conditions by Yangyang Li, Chuanbin Zeng, Xiaojing Li, Linchun Gao, Weiwei Yan, Duoli Li, Yi Zhang, Zhengsheng Han, Jiajun Luo

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Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique by Yangyang Li, Xiaojing Li, Bo Li, Linchun Gao, Weiwei Yan, Fangfang Wang, Duoli Li, Chuanbin Zeng, Jiajun Luo, Zhengsheng Han

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Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs by Rui Liu, Linchun Gao, Juanjuan Wang, Tao Ni, Yifan Li, Runjian Wang, Duoli Li, Jianhui Bu, Chuanbin Zeng, Bo Li, Jiajun Luo

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