Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si by A. Castellano, L. Cerutti, J. B. Rodriguez, G. Narcy, A. Garreau, F. Lelarge, E. Tournié

Get full text

Carrier dynamics in (Ga,In)(Sb,Bi)/GaSb quantum wells for laser applications in the mid-infrared spectral range by E. Rogowicz, J. Kopaczek, M. P. Polak, O. Delorme, L. Cerutti, E. Tournié, J.-B. Rodriguez, R. Kudrawiec, M. Syperek

Get full text

InAs-based quantum cascade lasers grown on on-axis (001) silicon substrate by Z. Loghmari, J.-B. Rodriguez, A. N. Baranov, M. Rio-Calvo, L. Cerutti, A. Meguekam, M. Bahriz, R. Teissier, E. Tournié

Get full text

Large inverted band gap in strained three-layer InAs/GaInSb quantum wells by C. Avogadri, S. Gebert, S. S. Krishtopenko, I. Castillo, C. Consejo, S. Ruffenach, C. Roblin, C. Bray, Y. Krupko, S. Juillaguet, S. Contreras, A. Wolf, F. Hartmann, S. Höfling, G. Boissier, J.-B. Rodriguez, S. Nanot, E. Tournié, F. Teppe, B. Jouault

Get full text