Analysis of Instability Behavior and Mechanism of E-Mode GaN Power HEMT with p-GaN Gate under Off-State Gate Bias Stress by Surya Elangovan, Edward Yi Chang, Stone Cheng

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Reliability Characterization of Gallium Nitride MIS-HEMT Based Cascode Devices for Power Electronic Applications by Surya Elangovan, Stone Cheng, Edward Yi Chang

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Impact of Al content on InAs/AlSb/Al(x)Ga(1−x)Sb tunnelling diode by Yuping Zeng, Chingyi Hsu, Edward Yi Chang, Chenming Hu

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Dynamic on‐state resistance instability characterization of a multi‐chip‐GaN MIS‐HEMTs cascode power module by Surya Elangovan, Stone Cheng, Wen‐Yea Jang, Edward Yi Chang

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Suppressing Non-Uniform Tunneling in InAs/GaSb TFET With Dual-Metal Gate by Ching-Yi Hsu, Chun-Yen Chang, Edward Yi Chang, Chenming Hu

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Variable-Frequency Pulse Width Modulation Circuits for Resonant Wireless Power Transfer by Li-Chuan Tang, Shyr-Long Jeng, Edward-Yi Chang, Wei-Hua Chieng

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Minimum Power Input Control for Class-E Amplifier Using Depletion-Mode Gallium Nitride High Electron Mobility Transistor by You-Chen Weng, Chih-Chiang Wu, Edward Yi Chang, Wei-Hua Chieng

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Investigation of the Effect of Different SiN_x Thicknesses on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors in Ka-Band by Che-Wei Hsu, Yueh-Chin Lin, Ming-Wen Lee, Edward-Yi Chang

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Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs by Pragyey Kumar Kaushik, Sankalp Kumar Singh, Ankur Gupta, Ananjan Basu, Edward Yi Chang

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Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications by Ming-Wen Lee, Cheng-Wei Chuang, Francisco Gamiz, Edward-Yi Chang, Yueh-Chin Lin

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Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulat... by Hsin-Ying Lee, Ting-Wei Chang, Edward Yi Chang, Niklas Rorsman, Ching-Ting Lee

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Ferroelectric-like behavior in HfO2/Al2O3/AlN metal-insulator-semiconductor capacitor through AlN thermal stress by Min-Lu Kao, Yuan Lin, You-Chen Weng, Chang-Fu Dee, Edward Yi Chang

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Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications by Ming-Wen Lee, Yueh-Chin Lin, Heng-Tung Hsu, Francisco Gamiz, Edward-Yi Chang

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Flyback Converter Using a D-Mode GaN HEMT Synchronous Rectifier by Yueh-Tsung Shieh, Ching-Yao Liu, Chih-Chiang Wu, Wei-Hua Chieng, Edward-Yi Chang

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Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array by Hsin-Ying Lee, Day-Shan Liu, Jen-Inn Chyi, Edward Yi Chang, Ching-Ting Lee

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Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate by You-Chen Weng, Ming-Yao Hsiao, Chun-Hsiung Lin, Yu-Pin Lan, Edward-Yi Chang

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Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter by Chih-Chiang Wu, Ching-Yao Liu, Sandeep Anand, Wei-Hua Chieng, Edward-Yi Chang, Arnab Sarkar

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Discontinuous Current Mode Modeling and Zero Current Switching of Flyback Converter by Rustam Kumar, Chih-Chiang Wu, Ching-Yao Liu, Yu-Lin Hsiao, Wei-Hua Chieng, Edward-Yi Chang

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Derivation of the Resonance Mechanism for Wireless Power Transfer Using Class-E Amplifier by Ching-Yao Liu, Guo-Bin Wang, Chih-Chiang Wu, Edward Yi Chang, Stone Cheng, Wei-Hua Chieng

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Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications by Po-Chien Chou, Szu-Hao Chen, Ting-En Hsieh, Stone Cheng, Jesús A. del Alamo, Edward Yi Chang

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