Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation by Yuan, Mengyang, Niroula, John, Xie, Qingyun, Rajput, Nitul S., Fu, Kai, Luo, Shisong, Das, Sagar Kumar, Iqbal, Abdullah Jubair Bin, Sikder, Bejoy, Isamotu, Mohamed Fadil, Oh, Minsik, Eisner, Savannah R., Senesky, Debbie G., Hunter, Gary W., Chowdhury, Nadim, Zhao, Yuji, Palacios, Tomás

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Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments by Xie, Qingyun, Niroula, John, Rajput, Nitul S., Yuan, Mengyang, Luo, Shisong, Fu, Kai, Isamotu, Mohamed Fadil, Palash, Rafid Hassan, Sikder, Bejoy, Eisner, Savannah R., Surdi, Harshad, Belanger, Aidan J., Darmawi-Iskandar, Patrick K., Aksamija, Zlatan, Nemanich, Robert J., Goodnick, Stephen M., Senesky, Debbie G., Hunter, Gary W., Chowdhury, Nadim, Zhao, Yuji, Palacios, Tomás

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