Rapid, substrate-independent thickness determination of large area graphene layers Por Venkatachalam, D, Parkinson, P, Ruffell, S, Elliman, R

Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature Por Glasko, J, Elliman, R, Zou, J, Cockayne, D, Gerald, F

The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructures Por Glasko, J, Zou, J, Cockayne, D, Gerald, J, Elliman, R

Ion irradiation of GeSi Si strained-layer heterostructures Por Glasko, J, Elliman, R, Zou, J, Cockayne, D, FitzGerald, J

The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures Por Glasko, J, Zou, J, Cockayne, D, Gerald, J, Kringhoj, P, Elliman, R