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    Molecular beam epitaxy of metamorphic buffer for InGaAs/InP photodetectors with high photosensitivity in the range of 2.2–2.6 um

    Molecular beam epitaxy of metamorphic buffer for InGaAs/InP photodetectors with high photosensitivity in the range of 2.2–2.6 um by Elena I. Vasilkova, Evgeny V. Pirogov, Maxim S. Sobolev, Evgeny V. Ubiyvovk, Andrey M. Mizerov, Pavel V. Seredin

    Published 2023-03-01
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