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    In operando investigation of GaN PIN device characteristics under electron irradiation energies comparable to Pm-147 source for betavoltaic application

    In operando investigation of GaN PIN device characteristics under electron irradiation energies comparable to Pm-147 source for betavoltaic application by Kasey Hogan, Miguel Rodriguez, Emma Rocco, Vincent Meyers, Benjamin McEwen, F. Shadi Shahedipour-Sandvik

    Published 2020-08-01
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