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  1. 1
    Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n + InAs/p + GaSb nanowire tunneling devices

    Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n + InAs/p + GaSb nanowire tunneling devices by El Kazzi, S, Alian, A, Hsu, B, Favia, P, Merckling, C, Lu, W, del Alamo, JA, Collaert, N

    Published 2021
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    Article
  2. 2
    Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode

    Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode by El Kazzi, S., Alian, A., Hsu, B., Verhulst, A.S., Walke, A., Favia, P., Douhard, B., Lu, Wenjie, del Alamo, Jesus A, Collaert, N., Merckling, C.

    Published 2020
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    Article

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