Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs by Li-E. Cai, Chao-Zhi Xu, Fei-Bing Xiong, Ming-Jie Zhao, Hai-Feng Lin, Hong-Yi Lin, Dong Sun

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Erratum: “Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs” [AIP Adv. 11, 075027 (2021)] by Li-E. Cai, Chao-Zhi Xu, Fei-Bing Xiong, Ming-Jie Zhao, Hai-Feng Lin, Hong-Yi Lin, Dong Sun

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Temperature-Dependent HfO2/Si Interface Structural Evolution and its Mechanism by Xiao-Ying Zhang, Chia-Hsun Hsu, Shui-Yang Lien, Wan-Yu Wu, Sin-Liang Ou, Song-Yan Chen, Wei Huang, Wen-Zhang Zhu, Fei-Bing Xiong, Sam Zhang

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Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System by Xiao-Ying Zhang, Chia-Hsun Hsu, Shui-Yang Lien, Song-Yan Chen, Wei Huang, Chih-Hsiang Yang, Chung-Yuan Kung, Wen-Zhang Zhu, Fei-Bing Xiong, Xian-Guo Meng

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