In₀.₄₉ Ga₀.₅₁ P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations by Fitzgerald, Eugene A

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GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD by Heidelberger, Christopher, Fitzgerald, Eugene A

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Heavy p-type carbon doping of MOCVD GaAsP using CBrCl₃ by Heidelberger, Christopher, Fitzgerald, Eugene A

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Defect and temperature dependence of tunneling in InAs/GaSb heterojunctions by Iutzi, Ryan (Ryan Michael), Fitzgerald, Eugene A.

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Microstructure and conductance-slope of InAs/GaSb tunnel diodes by Fitzgerald, Eugene A., Iutzi, Ryan (Ryan Michael)

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SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication by Cheng, Zhiyuan, Fitzgerald, Eugene A., Antoniadis, Dimitri A.

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3.225 Electronic and Mechanical Properties of Materials, Summer 2002 by Gibson, Lorna J., Tuller, Harry L., Fitzgerald, Eugene

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Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates by Jandl, Adam Christopher, Bulsara, Mayank, Fitzgerald, Eugene A.

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Inside real innovation : how the right approach can move ideas from R&D to market-- and get the economy moving / by 518468 Fitzgerald, Eugene, Wankerl, Andreas, 1973-, Schramm, Carl J.

Fabrication and I-V Characterization of ZnO Nanorod Based Metal-Insulator-Semiconductor Junction by Quang, Le Hong, Chua, Soo-Jin, Fitzgerald, Eugene A.

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Laser Fabrication by Using Photonic Crystal by Vajpeyi, Agam P., Chua, Soo-Jin, Fitzgerald, Eugene A.

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Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epilayers Grown on sapphire by Chua, Soo-Jin, Fitzgerald, Eugene A., Song, T.L.

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Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epliayers Grown on Sapphire by Song, T.L., Chua, Soo-Jin, Fitzgerald, Eugene A.

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Thermal conductivity of GaAs/Ge nanostructures by Jia, Roger Qingfeng, Zeng, Lingping, Chen, Gang, Fitzgerald, Eugene A

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Luminescence of III-IV-V thin film alloys grown by metalorganic chemical vapor deposition by Jia, Roger Qingfeng, Zhu, Tony, Bulovic, Vladimir, Fitzgerald, Eugene A

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Enhancement in Indium Incorporation for InGaN Grown on InN Intermediate Layer by Hartono, Haryono, Chen, P., Fitzgerald, Eugene A., Chua, Soo-Jin

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Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching by Chen, A., Chua, Soo-Jin, Wang, B., Fitzgerald, Eugene A.

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Micro Raman Spectroscopy of Annealed Erbium Implanted GaN by Vajpeyi, Agam P., Chua, Soo-Jin, Fitzgerald, Eugene A., Tripathy, S.

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High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching by Vajpeyi, Agam P., Chua, Soo-Jin, Tripathy, S., Fitzgerald, Eugene A.

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Free-standing Al[subscript x]Ga[subscript 1−x]As heterostructures by gas-phase etching of germanium by Cole, Garrett D., Bai, Yu, Aspelmeyer, Markus, Fitzgerald, Eugene A.

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