In₀.₄₉ Ga₀.₅₁ P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations von Fitzgerald, Eugene A

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GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD von Heidelberger, Christopher, Fitzgerald, Eugene A

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Heavy p-type carbon doping of MOCVD GaAsP using CBrCl₃ von Heidelberger, Christopher, Fitzgerald, Eugene A

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Defect and temperature dependence of tunneling in InAs/GaSb heterojunctions von Iutzi, Ryan (Ryan Michael), Fitzgerald, Eugene A.

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Microstructure and conductance-slope of InAs/GaSb tunnel diodes von Fitzgerald, Eugene A., Iutzi, Ryan (Ryan Michael)

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SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication von Cheng, Zhiyuan, Fitzgerald, Eugene A., Antoniadis, Dimitri A.

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Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates von Jandl, Adam Christopher, Bulsara, Mayank, Fitzgerald, Eugene A.

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Fabrication and I-V Characterization of ZnO Nanorod Based Metal-Insulator-Semiconductor Junction von Quang, Le Hong, Chua, Soo-Jin, Fitzgerald, Eugene A.

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Laser Fabrication by Using Photonic Crystal von Vajpeyi, Agam P., Chua, Soo-Jin, Fitzgerald, Eugene A.

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Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epilayers Grown on sapphire von Chua, Soo-Jin, Fitzgerald, Eugene A., Song, T.L.

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Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epliayers Grown on Sapphire von Song, T.L., Chua, Soo-Jin, Fitzgerald, Eugene A.

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Thermal conductivity of GaAs/Ge nanostructures von Jia, Roger Qingfeng, Zeng, Lingping, Chen, Gang, Fitzgerald, Eugene A

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Luminescence of III-IV-V thin film alloys grown by metalorganic chemical vapor deposition von Jia, Roger Qingfeng, Zhu, Tony, Bulovic, Vladimir, Fitzgerald, Eugene A

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Enhancement in Indium Incorporation for InGaN Grown on InN Intermediate Layer von Hartono, Haryono, Chen, P., Fitzgerald, Eugene A., Chua, Soo-Jin

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Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching von Chen, A., Chua, Soo-Jin, Wang, B., Fitzgerald, Eugene A.

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Micro Raman Spectroscopy of Annealed Erbium Implanted GaN von Vajpeyi, Agam P., Chua, Soo-Jin, Fitzgerald, Eugene A., Tripathy, S.

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High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching von Vajpeyi, Agam P., Chua, Soo-Jin, Tripathy, S., Fitzgerald, Eugene A.

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Free-standing Al[subscript x]Ga[subscript 1−x]As heterostructures by gas-phase etching of germanium von Cole, Garrett D., Bai, Yu, Aspelmeyer, Markus, Fitzgerald, Eugene A.

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Silicon CMOS Ohmic Contact Technology for Contacting III-V Compound Materials von Pacella, Nan Y., Mukherjee, Kunal, Bulsara, Mayank, Fitzgerald, Eugene A.

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Controlling Epitaxial GaAs[subscript x]P[subscript 1-x]/Si[subscript 1-y]Ge[subscript y] Heterovalent Interfaces von Sharma, Prithu, Milakovich, Timothy J., Bulsara, Mayank, Fitzgerald, Eugene A.

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