Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires by Boland, J, Tutuncuoglu, G, Gong, J, Conesa-Boj, S, Davis, C, Herz, L, Fontcuberta i Morral, A, Johnston, M

Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires by Peng, K, Morgan, NP, Wagner, FM, Siday, T, Xia, CQ, Dede, D, Boureau,V, Piazza, V, Fontcuberta i Morral, A, Johnston, MB

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping. by Boland, J, Casadei, A, Tutuncuoglu, G, Matteini, F, Davies, C, Jabeen, F, Joyce, H, Herz, L, Fontcuberta I Morral, A, Johnston, M

Increased photoconductivity lifetimes in GaAs nanowires via n-type and p-type shell doping by Boland, J, Casadei, A, Tutuncouglu, G, Matteini, F, Davies, C, Gaveen, F, Amaduzzi, F, Joyce, H, Herz, L, Fontcuberta i Morral, A, Johnston, M

Fundamental aspects to localize self-catalyzed III-V nanowires on silicon by Vukajlovic-Plestina, J, Kim, W, Ghisalberti, L, Varnavides, G, Tütüncuoglu, G, Potts, H, Friedl, M, Güniat, L, Carter, WC, Dubrovskii, VG, Fontcuberta i Morral, A

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Heterotwin Zn3P2 superlattice nanowires: the role of indium insertion in the superlattice formation mechanism and their optical properties by Escobar Steinvall, S, Ghisalberti, L, Zamani, RR, Tappy, N, Hage, FS, Stutz, EZ, Zamani, M, Paul, R, Leran, J-B, Ramasse, QM, Craig Carter, W, Fontcuberta I Morral, A

Modulation doping of GaAs/AlGaAs core-shell nanowires with effective defect passivation and high electron mobility by Boland, J, Conesa-Boj, S, Parkinson, P, Tütüncüoglu, G, Matteini, F, Rüffer, D, Casadei, A, Amaduzzi, F, Jabeen, F, Davies, C, Joyce, H, Herz, L, Fontcuberta i Morral, A, Johnston, M