Showing 1 - 2 results of 2 for search 'Fujishima, Tatsuya', query time: 0.02s Refine Results
  1. 1
    Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

    Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors by Zhang, Yuhao, Sun, Min, Jayanta Joglekar, Sameer, Fujishima, Tatsuya, Palacios, Tomas

    Published 2018
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  2. 2
    Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam

    Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam by Uedono, Akira, Fujishima, Tatsuya, Piedra, Daniel, Yoshihara, Nakaaki, Ishibashi, Shoji, Sumiya, Masatomo, Laboutin, Oleg, Johnson, Wayne, Palacios, Tomás

    Published 2018
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