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    Highly-stable black phosphorus field-effect transistors with low density of oxide traps

    Highly-stable black phosphorus field-effect transistors with low density of oxide traps by Yu. Yu. Illarionov, M. Waltl, G. Rzepa, T. Knobloch, J.-S. Kim, D. Akinwande, T. Grasser

    Published 2017-07-01
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