Čájehuvvojit 1 - 3 oktiibuot 3 bohtosis ohcui Gambaro, D', ohcanáigi: 0,02s Aiddostahte ozu
  1. 1
    The segregation behaviour of oxygen at dislocations in silicon

    The segregation behaviour of oxygen at dislocations in silicon Dahkki Senkader, S, Wilshaw, P, Gambaro, D, Falster, R

    Almmustuhtton 1999
    Journal article
  2. 2
    Onset of slip in silicon containing oxide precipitates

    Onset of slip in silicon containing oxide precipitates Dahkki Jurkschat, K, Senkader, S, Wilshaw, P, Gambaro, D, Falster, R

    Almmustuhtton 2001
    Journal article
  3. 3
    On the locking of dislocations by oxygen in silicon

    On the locking of dislocations by oxygen in silicon Dahkki Senkader, S, Jurkschat, K, Gambaro, D, Falster, R, Wilshaw, P

    Almmustuhtton 2001
    Journal article

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