Interaction of oxygen and nitrogen impurities with dislocations in silicon single-crystals 由 Giannattasio, A

Strain-rate dependence of the brittle-to-ductile transition temperature in tungsten 由 Giannattasio, A, Roberts, S

An empirical correlation between temperature and activation energy for brittle-to-ductile transitions in single-phase materials 由 Giannattasio, A, Tanaka, M, Joseph, T, Roberts, S

Dislocation locking by oxygen in silicon: New insights to oxygen diffusion at low temperatures 由 Senkader, S, Giannattasio, A, Falster, R, Wilshaw, P

Dislocation locking by nitrogen impurities in FZ-silicon 由 Giannattasio, A, Senkader, S, Falster, R, Wilshaw, P

Brittle-ductile transitions in polycrystalline tungsten 由 Giannattasio, A, Yao, Z, Tarleton, E, Roberts, S

Generation of dislocation glide loops in Czochralski silicon 由 Giannattasio, A, Senkader, S, Falster, R, Wilshaw, P

The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon 由 Giannattasio, A, Senkader, S, Falster, R, Wilshaw, P

Dislocation locking in silicon by oxygen and oxygen transport at low temperatures 由 Senkader, S, Giannattasio, A, Falster, R, Wilshaw, P

On the dislocation-oxygen interactions in Czochralski-grown Si: oxygen diffusion and binding at low temperatures 由 Senkader, S, Giannattasio, A, Falster, R, Wilshaw, P

The use of numerical simulation to predict the unlocking stress of dislocations in Cz-silicon wafers 由 Giannattasio, A, Senkader, S, Azam, S, Falster, R, Wilshaw, P

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments (vol 152, pg G460, 2005) 由 Giannattasio, A, Murphy, J, Senkader, S, Falster, R, Wilshaw, P

Impurity locking of dislocations in silicon 由 Giannattasio, A, Murphy, J, Senkader, S, Falster, R, Wilshaw, P

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments 由 Murphy, J, Giannattasio, A, Senkader, S, Falster, R, Wilshaw, P

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments 由 Murphy, J, Giannattasio, A, Senkader, S, Falster, R, Wilshaw, P

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments 由 Giannattasio, A, Murphy, J, Senkader, S, Falster, R, Wilshaw, P

The mechanical properties of tungsten grown by chemical vapour deposition 由 Murphy, J, Giannattasio, A, Yao, Z, Hetherington, C, Nellist, P, Roberts, S

The influence of nitrogen on dislocation locking in float-zone silicon 由 Murphy, J, Giannattasio, A, Alpass, C, Senkader, S, Falster, R, Wilshaw, P

Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking 由 Alpass, C, Murphy, J, Giannattasio, A, Senkader, S, Falster, R, Wilshaw, P

Nitrogen in silicon: Transport and mechanical properties 由 Murphy, J, Alpass, C, Giannattasio, A, Senkader, S, Falster, R, Wilshaw, P