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Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature by Jun Lan, Zhixiong Li, Zhenjie Chen, Quanzhou Zhu, Wenhui Wang, Muhammad Zaheer, Jiqing Lu, Jinxuan Liang, Mei Shen, Peng Chen, Kai Chen, Guobiao Zhang, Zhongrui Wang, Feichi Zhou, Longyang Lin, Yida Li
Published 2023-03-01
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