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  1. 1
    Fabrication of Mg-X-O (X = Fe, Co, Ni, Cr, Mn, Ti, V, and Zn) barriers for magnetic tunnel junctions

    Fabrication of Mg-X-O (X = Fe, Co, Ni, Cr, Mn, Ti, V, and Zn) barriers for magnetic tunnel junctions by K. Yakushiji, E. Kitagawa, T. Ochiai, H. Kubota, N. Shimomura, J. Ito, H. Yoda, S. Yuasa

    Published 2018-05-01
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  2. 2
    Ultra-High-Efficiency Writing in Voltage-Control Spintronics Memory (VoCSM): The Most Promising Embedded Memory for Deep Learning

    Ultra-High-Efficiency Writing in Voltage-Control Spintronics Memory (VoCSM): The Most Promising Embedded Memory for Deep Learning by Y. Ohsawa, H. Yoda, N. Shimomura, S. Shirotori, S. Fujita, K. Koi, A. Buyandalai, S. Oikawa, M. Shimizu, Y. Kato, T. Inokuchi, H. Sugiyama, M. Ishikawa, K. Ikegami, S. Takaya, A. Kurobe

    Published 2018-01-01
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    Article

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