Gate-all-around silicon nanowire MOSFETs : top-down fabrication and transport enhancement techniques by Hashemi, Pouya

Get full text

Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs by Gomez, Leonardo, Hashemi, Pouya, Hoyt, Judy L.

Get full text

Gate-all-around n-MOSFETs with uniaxial tensile strain-induced performance enhancement scalable to sub-10-nm nanowire diameter by Gomez, Leonardo, Hashemi, Pouya, Hoyt, Judy L.

Get full text

Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-k/metal-gate: Effects of hydrogen thermal annealing and nanowire shape by Hashemi, Pouya, Teherani, James T., Hoyt, Judy L.

Get full text
Get full text

Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs by Chleirigh, C. Ni, Gomez, Leonardo, Hashemi, Pouya, Hoyt, Judy L.

Get full text