Investigation of Light-Extraction Efficiency of Flip-Chip AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes Adopting AlGaN Metasurface by Joosun Yun, Hideki Hirayama

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Reflectance of a reflective photonic crystal p-contact layer for improving the light-extraction efficiency of AlGaN-based deep-ultraviolet light-emitting diodes by Joosun Yun, Yukio Kashima, Hideki Hirayama

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Nonrelevant quantum levels effecting on the current in 2-well terahertz quantum cascade lasers by Li Wang, Tsung-Tse Lin, Ke Wang, Hideki Hirayama

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Optical gain reduction caused by nonrelevant subbands in narrow-period terahertz quantum cascade laser designs by Li Wang, Tsung-Tse Lin, Ke Wang, Hideki Hirayama

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High-Efficiency and High-Reliability Deep-UV Light-Emitting Diodes Using Transparent Ni-Implanted AlN Ohmic Electrodes by Tae Hoon Park, Kyung Rock Son, Hideki Hirayama, Tae Geun Kim

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Investigation of V/III ratio dependencies for optimizing AlN growth during reduced parasitic reaction in metalorganic vapor phase epitaxy by Atsushi Tomita, Takumi Miyagawa, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi, Kentaro Nagamatsu

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High growth temperature for AlN by jet stream gas flow metalorganic vapor phase epitaxy by Kentaro Nagamatsu, Takumi Miyagawa, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi

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Superlattice period dependence on nonradiative recombination centers in the n-AlGaN layer of UV-B region revealed by below-gap excitation light by M. Ismail Hossain, Yuri Itokazu, Shunsuke Kuwaba, Norihiko Kamata, Noritoshi Maeda, Hideki Hirayama

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Achieving 9.6% efficiency in 304 nm p-AlGaN UVB LED via increasing the holes injection and light reflectance by M. Ajmal Khan, Noritoshi Maeda, Joosun Yun, Masafumi Jo, Yoichi Yamada, Hideki Hirayama

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Reduction of parasitic reaction in high-temperature AlN growth by jet stream gas flow metal–organic vapor phase epitaxy by Kentaro Nagamatsu, Shota Tsuda, Takumi Miyagawa, Reiya Aono, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi

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M-plane GaN terahertz quantum cascade laser structure design and doping effect for resonant-phonon and phonon-scattering-injection schemes by Fan Ye, Yiyang Wang, Li Wang, Tsung-Tse Lin, Fantai Zeng, Yue Ji, Jinchuan Zhang, Fengqi Liu, Hideki Hirayama, Ke Wang, Yi Shi, Youdou Zheng, Rong Zhang

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