Improvement of structural quality of AlN layers grown on c-plane sapphire substrate by metal–organic vapor phase epitaxy using post-growth annealing with trimethylgallium by Masataka Imura, Hideki Inaba, Takaaki Mano, Nobuyuki Ishida, Fumihiko Uesugi, Yoko Kuroda, Yoshiko Nakayama, Masaki Takeguchi, Yasuo Koide

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