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Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor by Toshiki Kanaki, Hiroki Yamasaki, Tomohiro Koyama, Daichi Chiba, Shinobu Ohya, Masaaki Tanaka
Published 2018-05-01
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