Flexible TiN/Ge photodetectors with enhanced responsivity via localized surface plasmon resonance and strain modulation by Kim, You Jin, An, Shu, Liao, Yikai, Huang, Po-Rei, Son, Bongkwon, Tan, Chuan Seng, Chang, Guo-En, Kim, Munho

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Single-crystalline Ge₁₋ₓSnₓ/Si p–n heterojunction photodiodes with Sn compositions up to 10% by An, Shu, Huang, Yi-Chiau, Wu, Chen-Ying, Huang, Po-Rei, Chang, Guo-En, Lai, Junyu, Seo, Jung-Hun, Kim, Munho

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Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses by Tai, Yeh-Chen, An, Shu, Huang, Po-Rei, Jheng, Yue-Tong, Lee, Kuo-Chih, Cheng, Hung-Hsiang, Kim, Munho, Chang, Guo-En

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GaAs/GeSn/Ge n-i-p diodes and light emitting diodes formed via grafting by Zhou, Jie, Wang, Haibo, Huang, Po Rei, Xu, Shengqiang, Liu, Yang, Gong, Jiarui, Shen, Jianping, Vicent, Daniel, Haessly, Samuel, Abrand, Alireza, Mohseni, Parsian K., Kim, Munho, Yu, Shui-Qing, Chang, Guo-En, Gong, Xiao, Ma, Zhenqiang

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