Structural and electronic properties of NbN/GaN junctions grown by molecular beam epitaxy by John G. Wright, Celesta S. Chang, David A. Muller, Huili G. Xing, Debdeep Jena

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Room temperature weak ferromagnetism in Sn1−xMnxSe2 2D films grown by molecular beam epitaxy by Sining Dong, Xinyu Liu, Xiang Li, Vasily Kanzyuba, Taehee Yoo, Sergei Rouvimov, Suresh Vishwanath, Huili G. Xing, Debdeep Jena, Margaret Dobrowolska, Jacek K. Furdyna

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Erratum: “Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy,” [APL. Mater. 9, 031101 (2021)] by Patrick Vogt, Felix V. E. Hensling, Kathy Azizie, Celesta S. Chang, David Turner, Jisung Park, Jonathan P. McCandless, Hanjong Paik, Brandon J. Bocklund, Georg Hoffmann, Oliver Bierwagen, Debdeep Jena, Huili G. Xing, Shin Mou, David A. Muller, Shun-Li Shang, Zi-Kui Liu, Darrell G. Schlom

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Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy by Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak, Yunjo Kim, Naomi A. Pieczulewski, Daniel M. Dryden, M. K. Indika Senevirathna, Selena Coye, Shun-Li Shang, Jacob Steele, Patrick Vogt, Nicholas A. Parker, Yorick A. Birkhölzer, Jonathan P. McCandless, Debdeep Jena, Huili G. Xing, Zi-Kui Liu, Michael D. Williams, Andrew J. Green, Kelson Chabak, David A. Muller, Adam T. Neal, Shin Mou, Michael O. Thompson, Hari P. Nair, Darrell G. Schlom

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