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    Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices

    Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices by Huolin Huang, Feiyu Li, Zhonghao Sun, Yaqing Cao

    Published 2018-12-01
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