Effects of Annealing Atmosphere on Electrical Performance and Stability of High-Mobility Indium-Gallium-Tin Oxide Thin-Film Transistors by Hwan-Seok Jeong, Hyun Seok Cha, Seong Hyun Hwang, Hyuck-In Kwon

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Conduction Band Edge Energy Profile Probed by Hall Offset Voltage in InGaZnO Thin Films by Hyo-Jun Joo, Dae-Hwan Kim, Hyun-Seok Cha, Sang-Hun Song

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Effects of Active Layer Thickness on the Electrical Characteristics and Stability of High-Mobility Amorphous Indium–Gallium–Tin Oxide Thin-Film Transistors by Dae-Hwan Kim, Hyun-Seok Cha, Hwan-Seok Jeong, Seong-Hyun Hwang, Hyuck-In Kwon

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Electrical Performance and Stability Improvements of High-Mobility Indium–Gallium–Tin Oxide Thin-Film Transistors Using an Oxidized Aluminum Capping Layer of Optimal Thickness by Hyun-Seok Cha, Hwan-Seok Jeong, Seong-Hyun Hwang, Dong-Ho Lee, Hyuck-In Kwon

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Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors by Min-Gyu Shin, Kang-Hwan Bae, Hyun-Seok Cha, Hwan-Seok Jeong, Dae-Hwan Kim, Hyuck-In Kwon

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Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors by Min-Gyu Shin, Kang-Hwan Bae, Hwan-Seok Jeong, Dae-Hwan Kim, Hyun-Seok Cha, Hyuck-In Kwon

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