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Characteristics of the formation and composition of AlxGa1-xN/AlN/por-Si/Si(111) heterostructures grown using a porous silicon buffer layer by Alexander S. Lenshin, Pavel V. Seredin, Dmitry S. Zolotukhin, Artemy N. Beltyukov, Andrey M. Mizerov, Igor A. Kasatkin, Ali O. Radam, Evelina P. Domashevskaya
Published 2022-03-01
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