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    Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition

    Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition by Viktor Shamakhov, Sergey Slipchenko, Dmitriy Nikolaev, Alexander Smirnov, Ilya Eliseyev, Artyom Grishin, Matvei Kondratov, Ilya Shashkin, Nikita Pikhtin

    Published 2023-08-01
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