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    Comparison of active dual‐gate and passive mixers for terahertz applications

    Comparison of active dual‐gate and passive mixers for terahertz applications by Christopher M. Grötsch, Iulia Dan, Laurenz John, Sandrine Wagner, Ingmar Kallfass

    Published 2021-07-01
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  2. 2
    PECVD SiNx passivation with more than 8 MV/cm breakdown strength for GaN-on-Si wafer stress management

    PECVD SiNx passivation with more than 8 MV/cm breakdown strength for GaN-on-Si wafer stress management by Matthias Moser, Mamta Pradhan, Mohammed Alomari, Michael Heuken, Thomas Schmitt, Ingmar Kallfass, Joachim N. Burghartz

    Published 2023-03-01
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    Article

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