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Thickness-Dependent Structural and Electrical Properties of WS2 Nanosheets Obtained via the ALD-Grown WO3 Sulfurization Technique as a Channel Material for Field-Effect Transistors by Roman I. Romanov, Maxim G. Kozodaev, Anna G. Chernikova, Ivan V. Zabrosaev, Anastasia A. Chouprik, Sergey S. Zarubin, Sergey M. Novikov, Valentyn S. Volkov, Andrey M. Markeev
Published 2021-12-01
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Field-Effect Transistor Based on 2D Microcrystalline MoS<sub>2</sub> Film Grown by Sulfurization of Atomically Layer Deposited MoO<sub>3</sub> by Ivan V. Zabrosaev, Maxim G. Kozodaev, Roman I. Romanov, Anna G. Chernikova, Prabhash Mishra, Natalia V. Doroshina, Aleksey V. Arsenin, Valentyn S. Volkov, Alexandra A. Koroleva, Andrey M. Markeev
Published 2022-09-01
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