Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact by Yannick Baines, Julien Buckley, Jérôme Biscarrat, Gennie Garnier, Matthew Charles, William Vandendaele, Charlotte Gillot, Marc Plissonnier

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Analytic Model of Threshold Voltage (V_TH) Recovery in Fully Recessed Gate MOS-Channel HEMT (High Electron Mobility Transistor) after OFF-State Drain Stress by René Escoffier, Blend Mohamad, Julien Buckley, Romain Gwoziecki, Jérome Biscarrat, Véronique Sousa, Marc Orsatelli, Emmanuel Marcault, Julien Ranc, Roberto Modica, Ferdinando Iucolano

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On the Understanding of Cathode Related Trapping Effects in GaN-on-Si Schottky Diodes by Thomas Lorin, William Vandendaele, Romain Gwoziecki, Yannick Baines, Jerome Biscarrat, Marie-Anne Jaud, Charlotte Gillot, Matthew Charles, Marc Plissonnier, G. Ghibaudo, F. Gaillard

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