Simulation of forward current-voltage characteristics for Schottky diodes with MOS trenches by J. A. Solovjov

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Effect of Rapid Thermal Annealing Conditions on the Specific Resistance of the Ohmic Contacts of Ti/Al/Ni/Au Metallization to the GaN/AlGaN Heterostructure by A. D. Yunik, J. A. Solovjov

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EFFECT OF RAPID THERMAL TREATMENT CONDITIONS ON ELECTROPHYSICAL PROPERTIES OF CROMIUM THIN FILMS ON SILICON by J. A. Solovjov, V. A. Pilipenko

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Effect of Rapid Thermal Annealing Temperature on the Electrophysical Properties of the Ohmic Contact of Ti/Al/Ni Metallization to the GaN/AlGaN Heterostructure by A. D. Yunik, J. A. Solovjov, D. V. Zhyhulin

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Structure and morphology of CrSi₂ layers formed by rapid thermal treatment by J. A. Solovjov, V. A. Pillipenko, P. I. Gaiduk

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Simulation of silicon wafers heating during rapid thermal processing using “UBTO 1801” unit by J. A. Solovjov, V. A. Pilipenko, V. P. Yakovlev

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Thermal Load Influence during the Formation of Al-Al Contacts on the Electrical Parameters of the Integrated Circuits with Aluminum-Polysilicon Contacts by V. A. Pilipenko, V. A. Solodukha, N. S. Kovalchuk, J. A. Solovjov, D. V. Shestovski, D. V. Zhyhulin

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MONITORING OF IC ENCAPSULATION PROCESS by V. A. Saladukha, V. S. Turtsevitch, J. A. Solovjov, I. I. Rubtsevitch, A. F. Kerentsev, A. A. Dovzhenko, I. V. Chirko

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