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High Al-content AlGaN channel high electron mobility transistors on silicon substrate by J. Mehta, I. Abid, J. Bassaler, J. Pernot, P. Ferrandis, M. Nemoz, Y. Cordier, S. Rennesson, S. Tamariz, F. Semond, F. Medjdoub
Published 2023-03-01
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