Showing 1 - 2 results of 2 for search 'J. Gehrunger', query time: 0.02s
Refine Results
-
1
-
2
Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices by F. L. Aguirre, E. Piros, N. Kaiser, T. Vogel, S. Petzold, J. Gehrunger, C. Hochberger, T. Oster, K. Hofmann, J. Suñé, E. Miranda, L. Alff
Published 2024-01-01
Article