Showing 1 - 20 results of 178 for search 'Jagadish C', query time: 0.21s
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1
Si and C delta-doping of GaAs grown by metal organic vapour phase epitaxy for fabrication of nipi doping superlattices by Jagadish, C, Li, G, Johnston, M, Gal, M
Published 1998Conference item -
2
Growth of Si and C delta-doped nipi doping superlattices in GaAs by metal organic vapor phase epitaxy by Li, G, Jagadish, C, Johnston, M, Gal, M
Published 1996Journal article -
3
Optical properties of delta-doped GaAs nipi super-lattices by Johnston, M, Gal, M, Li, G, Jagadish, C
Published 1996Conference item -
4
Droplet epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications by Lei, W, Parkinson, P, Tan, H, Jagadish, C
Published 2012Conference item -
5
Photoluminescence study of the dynamical properties of GaAs sawtooth superlattices by Johnston, M, Gal, M, Li, G, Jagadish, C
Published 1997Journal article -
6
TEM study of compositional profile in AlGaAs/GaAs quantum wells by Zou, J, Cai, D, Cockayne, D, Yuan, S, Jagadish, C
Published 1998Conference item -
7
Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers by Fu, L, Tan, H, Johnston, M, Gal, M, Jagadish, C
Published 1999Journal article -
8
Structural and optical properties of III-V nanowires and nanowire heterostructures grown by metalorganic chemical vapour deposition by Joyce, H, Gao, Q, Kim, Y, Tan, H, Jagadish, C
Published 2007Conference item -
9
Ion damage buildup and amorphization processes in GaAs-AlxGa1-xAs multilayers by Tan, H, Jagadish, C, Williams, J, Zou, J, Cockayne, D
Published 1996Journal article -
10
Growth, structural and optical properties of III-V nanowires for optoelectronic applications by Joyce, H, Gao, Q, Kim, Y, Tan, H, Jagadish, C
Published 2007Conference item -
11
Optimised two-temperature growth of GaAs nanowire s by metalorganic chemical vapour deposition by Joyce, H, Kim, Y, Gao, Q, Tan, H, Jagadish, C
Published 2006Conference item -
12
Growth, structural and optical properties of GaAs, InGaAs and AlGaAs nanowires and nanowire heterostruetures by Joyce, H, Gao, Q, Kim, Y, Tan, H, Jagadish, C
Published 2007Conference item -
13
Picosecond carrier lifetime measurements on a single GaAs Nanowire by Parkinson, P, Wang, H, Gao, Q, Tan, H, Jagadish, C
Published 2012Conference item -
14
{111} defects in 1-MeV-silicon-ion-implanted silicon. by Chou, C, Cockayne, D, Zou, J, Kringhoj, P, Jagadish, C
Published 1995Journal article -
15
{111} and {311} rod-like defects in silicon ion implanted silicon by Chou, C, Cockayne, D, Zou, J, Kringhoj, P, Jagadish, C
Published 1996Conference item -
16
Growth of III-V nanowires and nanowire heterostructures by metalorganic chemical vapor deposition by Joyce, H, Kim, Y, Gao, Q, Tan, H, Jagadish, C
Published 2007Conference item -
17
Direct-write non-linear photolithography for semiconductor nanowire characterization. by Parkinson, P, Jiang, N, Gao, Q, Tan, H, Jagadish, C
Published 2012Journal article -
18
Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing by Buda M, Mokkapati S, Du Sichao, Fu L, Tan HH, Jagadish C
Published 2007-01-01
Article -
19
Phase perfection in zinc Blende and Wurtzite III-V nanowires using basic growth parameters. by Joyce, H, Wong-Leung, J, Gao, Q, Tan, H, Jagadish, C
Published 2010Journal article -
20
Raman probing of competitive laser heating and local recrystallization effect in ZnO nanocrystals. by Ye, J, Parkinson, P, Ren, F, Gu, S, Tan, H, Jagadish, C
Published 2012Journal article