Antiferromagnetic phase of the gapless semiconductor V[subscript 3]Al by Jamer, Michelle E., Assaf, Badih A., Sterbinsky, G. E., Arena, D., Lewis, L. H., Radtke, G., Heiman, D., Saul, Alberto Andres

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Proximity-Driven Enhanced Magnetic Order at Ferromagnetic-Insulator–Magnetic-Topological-Insulator Interface by Li, Mingda, Kirby, Brian. J., Jamer, Michelle E., Cui, Wenping, Wu, Lijun, Wei, Peng, Zhu, Yimei, Heiman, Don, Li, Ju, Chang, Cui-zu, Moodera, Jagadeesh

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Achieving high-temperature ferromagnetic topological insulating phase by proximity coupling by Katmis, Ferhat, Lauter, Valeria, Nogueira, Flavio S., Assaf, Badih A., Jamer, Michelle E., Wei, Peng, Satpati, Biswarup, Freeland, John W., Eremin, Ilya, Heiman, Don, Jarillo-Herrero, Pablo, Moodera, Jagadeesh S.

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