On Stress-Induced Polarization Effect in Ammonothermally Grown GaN Crystals by Karolina Grabianska, Robert Kucharski, Tomasz Sochacki, Jan L. Weyher, Malgorzata Iwinska, Izabella Grzegory, Michal Bockowski

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Fundamental Studies on Crystallization and Reaching the Equilibrium Shape in Basic Ammonothermal Method: Growth on a Native Lenticular Seed by Tomasz Sochacki, Robert Kucharski, Karolina Grabianska, Jan L. Weyher, Malgorzata Iwinska, Michal Bockowski, Lutz Kirste

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SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms by Magdalena A. Zając, Bogusław Budner, Malwina Liszewska, Bartosz Bartosewicz, Łukasz Gutowski, Jan L. Weyher, Bartłomiej J. Jankiewicz

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Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN by Tomasz Sochacki, Robert Kucharski, Karolina Grabianska, Jan L. Weyher, Magdalena A. Zajac, Malgorzata Iwinska, Lutz Kirste, Michal Bockowski

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Large-Scale Defect Clusters with Hexagonal Honeycomb-like Arrangement in Ammonothermal GaN Crystals by Lutz Kirste, Thu Nhi Tran Thi Caliste, Jan L. Weyher, Julita Smalc-Koziorowska, Magdalena A. Zajac, Robert Kucharski, Tomasz Sochacki, Karolina Grabianska, Malgorzata Iwinska, Carsten Detlefs, Andreas N. Danilewsky, Michal Bockowski, José Baruchel

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Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire by Bogdan I. Tsykaniuk, Andrii S. Nikolenko, Viktor V. Strelchuk, Viktor M. Naseka, Yuriy I. Mazur, Morgan E. Ware, Eric A. DeCuir, Bogdan Sadovyi, Jan L. Weyher, Rafal Jakiela, Gregory J. Salamo, Alexander E. Belyaev

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Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire by Bogdan I. Tsykaniuk, Andrii S. Nikolenko, Viktor V. Strelchuk, Viktor M. Naseka, Yuriy I. Mazur, Morgan E. Ware, Eric A. DeCuir, Bogdan Sadovyi, Jan L. Weyher, Rafal Jakiela, Gregory J. Salamo, Alexander E. Belyaev

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