Jan Van Houdt

Jan Van Houdt from the IMEC, Leuven, Belgium was named Fellow of the Institute of Electrical and Electronics Engineers (IEEE) in 2014 for contributions to flash memory devices. Provided by Wikipedia
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  1. 1
    On the Characterization and Separation of Trapping and Ferroelectric Behavior in HfZrO FET

    On the Characterization and Separation of Trapping and Ferroelectric Behavior in HfZrO FET by Md. Nur Kutubul Alam, Ben Kaczer, Lars-Ake Ragnarsson, Mihaela Popovici, Gerhard Rzepa, Naoto Horiguchi, Marc Heyns, Jan Van Houdt

    Published 2019-01-01
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  2. 2
    Impacts of Pulsing Schemes on the Endurance of Ferroelectric Metal–Ferroelectric–Insulator–Semiconductor Capacitors

    Impacts of Pulsing Schemes on the Endurance of Ferroelectric Metal–Ferroelectric–Insulator–Semiconductor Capacitors by Cheng-Hung Wu, Nicolo' Ronchi, Kuan-Chi Wang, Yu-Yun Wang, Sean Mcmitchell, Kaustuv Banerjee, Geert van Den Bosch, Jan van Houdt, Tian-Li Wu

    Published 2022-01-01
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  3. 3
    Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO<sub>2</sub> Metal-Ferroelectric-Metal Memory

    Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO<sub>2</sub> Metal-Ferroelectric-Metal... by Ting-Yu Chang, Kuan-Chi Wang, Hsien-Yang Liu, Jing-Hua Hseun, Wei-Cheng Peng, Nicolò Ronchi, Umberto Celano, Kaustuv Banerjee, Jan Van Houdt, Tian-Li Wu

    Published 2023-07-01
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  4. 4
    Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges

    Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges by Umberto Celano, Andres Gomez, Paola Piedimonte, Sabine Neumayer, Liam Collins, Mihaela Popovici, Karine Florent, Sean R. C. McMitchell, Paola Favia, Chris Drijbooms, Hugo Bender, Kristof Paredis, Luca Di Piazza, Stephen Jesse, Jan Van Houdt, Paul van der Heide

    Published 2020-08-01
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  5. 5
    Impact of the Ferroelectric Stack Lamination in Si Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFETs: Toward High-Density Multi-Level Cell and Synaptic Storage

    Impact of the Ferroelectric Stack Lamination in Si Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFETs: Toward High-Density Multi-Level Cell and Synaptic Stora... by Tarek Ali, Kati Kühnel, Ricardo Olivo, David Lehninger, Franz Müller, Maximilian Lederer, Matthias Rudolph, Sebastian Oehler, Konstantin Mertens, Raik Hoffmann, Katrin Zimmermann, Philipp Schramm, Joachim Metzger, Robert Binder, Malte Czernohorsky, Thomas Kämpfe, Konrad Seidel, Johannes Müller, Jan Van Houdt, Lukas M. Eng

    Published 2021-08-01
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