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Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors by Zhang, Yuhao, Sun, Min, Jayanta Joglekar, Sameer, Fujishima, Tatsuya, Palacios, Tomas
Published 2018
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Design space and origin of off-state leakage in GaN vertical power diodes by Wong, H.-Y., Braga, N. A., Mickevicius, R. V., Jayanta Joglekar, Sameer, Palacios, Tomas, Sun, Min, Zhang, Yuhao, Yu, Lili
Published 2018
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