Analog Performance and its Variability in Sub-10 nm Fin-Width FinFETs: a Detailed Analysis by Mandar S. Bhoir, Thomas Chiarella, Lars Ake Ragnarsson, Jerome Mitard, Valentina Terzeiva, Naoto Horiguchi, Nihar R. Mohapatra

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Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET by Soohyun Kim, Jungchun Kim, Doyoung Jang, Romain Ritzenthaler, Bertrand Parvais, Jerome Mitard, Hans Mertens, Thomas Chiarella, Naoto Horiguchi, Jae Woo Lee

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Automatic Prediction of Metal–Oxide–Semiconductor Field‐Effect Transistor Threshold Voltage Using Machine Learning Algorithm by Seoyeon Choi, Dong Geun Park, Min Jung Kim, Seain Bang, Jungchun Kim, Seunghee Jin, Ki Seok Huh, Donghyun Kim, Jerome Mitard, Cheol E. Han, Jae Woo Lee

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Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs by Stanislav Tyaginov, Barry O’Sullivan, Adrian Chasin, Yaksh Rawal, Thomas Chiarella, Camila Toledo de Carvalho Cavalcante, Yosuke Kimura, Michiel Vandemaele, Romain Ritzenthaler, Jerome Mitard, Senthil Vadakupudhu Palayam, Jason Reifsnider, Ben Kaczer

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