Bias Voltage Dependence of Sensing Characteristics in Tunneling Magnetoresistance Sensors by Piotr Wiśniowski, Maciej Nawrocki, Jerzy Wrona, Susana Cardoso, Paulo. P. Freitas

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Sensitivity and 3 dB Bandwidth in Single and Series-Connected Tunneling Magnetoresistive Sensors by Michał Dąbek, Piotr Wiśniowski, Tomasz Stobiecki, Jerzy Wrona, Susana Cardoso, Paulo P. Freitas

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Dependence of Sensitivity, Derivative of Transfer Curve and Current on Bias Voltage Magnitude and Polarity in Tunneling Magnetoresistance Sensors by Łukasz Fuśnik, Bartłomiej Szafraniak, Jerzy Wrona, Susana Cardoso, Paulo. P. Freitas, Piotr Wiśniowski

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Influence of intermixing at the Ta/CoFeB interface on spin Hall angle in Ta/CoFeB/MgO heterostructures by Monika Cecot, Łukasz Karwacki, Witold Skowroński, Jarosław Kanak, Jerzy Wrona, Antoni Żywczak, Lide Yao, Sebastiaan van Dijken, Józef Barnaś, Tomasz Stobiecki

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Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance by Mengxing Wang, Wenlong Cai, Kaihua Cao, Jiaqi Zhou, Jerzy Wrona, Shouzhong Peng, Huaiwen Yang, Jiaqi Wei, Wang Kang, Youguang Zhang, Jürgen Langer, Berthold Ocker, Albert Fert, Weisheng Zhao

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Microwave functionality of spintronic devices implemented in a hybrid complementary metal oxide semiconductor and magnetic tunnel junction technology by Rui Ma, Ahmed Sidi El Valli, Martin Kreißig, Gregory Di Pendina, Florian Protze, Ursula Ebels, Guillaume Prenat, Antoine Chavent, Vadym Iurchuk, Ricardo Sousa, Laurent Vila, Frank Ellinger, Jürgen Langer, Jerzy Wrona, Ioan‐Lucian Prejbeanu

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