Author Search Results :: UTM Library Massive Scholar Tracking

1

Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness by Maolin Zhang, Yufeng Guo, Jun Zhang, Jiafei Yao, Jing Chen

Published 2020-06-01

Get full text

Article

2

Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors by Maolin Zhang, Lei Wang, Kemeng Yang, Jiafei Yao, Weihua Tang, Yufeng Guo

Published 2023-06-01

Get full text

Article

3

Equivalent model and limit for the SOI lateral power device using high-k dielectric by Jiafei Yao, Yufeng Guo, Yu Deng, Kemeng Yang, Man Li, Tian Xia

Published 2019-12-01

Get full text

Article

4

Extraction of Interface-Trap Densities of the Stacked Bonding Structure in 3D Integration Using High-Frequency Capacitance-Voltage Technique by Man Li, Yufeng Guo, Jiafei Yao, Jun Zhang, Fanyu Liu, Weihua Tang

Published 2022-02-01

Get full text

Article

5

An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method by Kemeng Yang, Yufeng Guo, Jun Zhang, Jiafei Yao, Man Li, Ling Du, Xiaoming Huang

Published 2020-01-01

Get full text

Article

6

Automatic optimal design of field plate for silicon on insulator lateral double‐diffused metal oxide semiconductor using simulated annealing algorithm by Jing Chen, Renji Xia, Jinwen You, Qing Yao, Yuxuan Dai, Jun Zhang, Jiafei Yao, Yufeng Guo

Published 2024-03-01

Get full text

Article

7

Off-State Performance Characterization of an AlGaN/GaN Device via Artificial Neural Networks by Jing Chen, Yufeng Guo, Jun Zhang, Jianhua Liu, Qing Yao, Jiafei Yao, Maolin Zhang, Man Li

Published 2022-05-01

Get full text

Article

8

β-Ga2O3-Based Power Devices: A Concise Review by Maolin Zhang, Zeng Liu, Lili Yang, Jiafei Yao, Jing Chen, Jun Zhang, Wei Wei, Yufeng Guo, Weihua Tang

Published 2022-03-01

Get full text

Article

9

Double dielectrics enhancement on the LDMOS using high-k field dielectric and low-k buried dielectric by Jiafei Yao, Xin Liu, Mingshun Sun, Tianci Xu, Man Li, Jing Chen, Maolin Zhang, Jun Zhang, Yufeng Guo

Published 2022-07-01

Get full text

Article

10

A Novel Step–Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance by Jianhua Liu, Yufeng Guo, Jun Zhang, Jiafei Yao, Man Li, Maolin Zhang, Jing Chen, Xiaoming Huang, Chenyang Huang

Published 2021-10-01

Get full text

Article

11

The role of even longitudinal electric field distribution in optimizing carrier transport efficiency of field-effect transistors by Maolin Zhang, Zeng Liu, Lili Yang, Jiafei Yao, Jing Chen, Jun Zhang, Wei Wei, Weihua Tang, Yufeng Guo

Published 2022-09-01

Get full text

Article

12

The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT by Jianhua Liu, Jun Zhang, Jiafei Yao, Man Li, Jing Chen, Maolin Zhang, Xiaoming Huang, Chenyang Huang, Weihua Tang, Yufeng Guo

Published 2022-01-01

Get full text

Article

13

SiC-on-insulator based lateral power device and it’ s analytical models by Jiafei Yao, Ang Li, Yuao Liu, Ziwei Hu, Man Li, Kemeng Yang, Jun Zhang, Jing Chen, Maolin Zhang, Yufeng Guo

Published 2024-03-01

Get full text

Article

14

Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network by Qing Yao, Yufeng Guo, Bo Zhang, Jing Chen, Jun Zhang, Maolin Zhang, Xiaobo Guo, Jiafei Yao, Weihua Tang, Jianhua Liu

Published 2021-12-01

Get full text

Article

15

A 121 A/cm2 High Current Density Copolymer OSC-Based Thin-Film Power OFET With 300 V Off-State Breakdown Voltage by Fubin Wang, Jun Zhang, Hao Zhang, Lei Wang, Xin Wu, Haonan Lin, Jiayi Zhou, Yuhao Wang, Jiafei Yao, Jing Chen, Kemeng Yang, Man Li, Yufeng Guo

Published 2023-01-01

Get full text

Article

16

Impact Ionization Coefficient Prediction of a Lateral Power Device Using Deep Neural Network by Jingyu Cui, Linglin Ma, Yuxian Shi, Jinan Zhang, Yuxiang Liang, Jun Zhang, Haidong Wang, Qing Yao, Haonan Lin, Mengyang Li, Jiafei Yao, Maolin Zhang, Jing Chen, Man Li, Yufeng Guo

Published 2023-02-01

Get full text

Article

Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness by Maolin Zhang, Yufeng Guo, Jun Zhang, Jiafei Yao, Jing Chen

Breakdown Characteristics of Ga<sub>2</sub>O<sub>3</sub>-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors by Maolin Zhang, Lei Wang, Kemeng Yang, Jiafei Yao, Weihua Tang, Yufeng Guo

Equivalent model and limit for the SOI lateral power device using high-k dielectric by Jiafei Yao, Yufeng Guo, Yu Deng, Kemeng Yang, Man Li, Tian Xia

Extraction of Interface-Trap Densities of the Stacked Bonding Structure in 3D Integration Using High-Frequency Capacitance-Voltage Technique by Man Li, Yufeng Guo, Jiafei Yao, Jun Zhang, Fanyu Liu, Weihua Tang

An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method by Kemeng Yang, Yufeng Guo, Jun Zhang, Jiafei Yao, Man Li, Ling Du, Xiaoming Huang

Automatic optimal design of field plate for silicon on insulator lateral double‐diffused metal oxide semiconductor using simulated annealing algorithm by Jing Chen, Renji Xia, Jinwen You, Qing Yao, Yuxuan Dai, Jun Zhang, Jiafei Yao, Yufeng Guo

Off-State Performance Characterization of an AlGaN/GaN Device via Artificial Neural Networks by Jing Chen, Yufeng Guo, Jun Zhang, Jianhua Liu, Qing Yao, Jiafei Yao, Maolin Zhang, Man Li

<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>-Based Power Devices: A Concise Review by Maolin Zhang, Zeng Liu, Lili Yang, Jiafei Yao, Jing Chen, Jun Zhang, Wei Wei, Yufeng Guo, Weihua Tang

Double dielectrics enhancement on the LDMOS using high-k field dielectric and low-k buried dielectric by Jiafei Yao, Xin Liu, Mingshun Sun, Tianci Xu, Man Li, Jing Chen, Maolin Zhang, Jun Zhang, Yufeng Guo

A Novel Step–Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance by Jianhua Liu, Yufeng Guo, Jun Zhang, Jiafei Yao, Man Li, Maolin Zhang, Jing Chen, Xiaoming Huang, Chenyang Huang

The role of even longitudinal electric field distribution in optimizing carrier transport efficiency of field-effect transistors by Maolin Zhang, Zeng Liu, Lili Yang, Jiafei Yao, Jing Chen, Jun Zhang, Wei Wei, Weihua Tang, Yufeng Guo

The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT by Jianhua Liu, Jun Zhang, Jiafei Yao, Man Li, Jing Chen, Maolin Zhang, Xiaoming Huang, Chenyang Huang, Weihua Tang, Yufeng Guo

SiC-on-insulator based lateral power device and it’ s analytical models by Jiafei Yao, Ang Li, Yuao Liu, Ziwei Hu, Man Li, Kemeng Yang, Jun Zhang, Jing Chen, Maolin Zhang, Yufeng Guo

Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network by Qing Yao, Yufeng Guo, Bo Zhang, Jing Chen, Jun Zhang, Maolin Zhang, Xiaobo Guo, Jiafei Yao, Weihua Tang, Jianhua Liu

A 121 A/cm<sup>2</sup> High Current Density Copolymer OSC-Based Thin-Film Power OFET With 300 V Off-State Breakdown Voltage by Fubin Wang, Jun Zhang, Hao Zhang, Lei Wang, Xin Wu, Haonan Lin, Jiayi Zhou, Yuhao Wang, Jiafei Yao, Jing Chen, Kemeng Yang, Man Li, Yufeng Guo

Impact Ionization Coefficient Prediction of a Lateral Power Device Using Deep Neural Network by Jingyu Cui, Linglin Ma, Yuxian Shi, Jinan Zhang, Yuxiang Liang, Jun Zhang, Haidong Wang, Qing Yao, Haonan Lin, Mengyang Li, Jiafei Yao, Maolin Zhang, Jing Chen, Man Li, Yufeng Guo

Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness by Maolin Zhang, Yufeng Guo, Jun Zhang, Jiafei Yao, Jing Chen

Breakdown Characteristics of Ga<sub>2</sub>O<sub>3</sub>-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors by Maolin Zhang, Lei Wang, Kemeng Yang, Jiafei Yao, Weihua Tang, Yufeng Guo

Equivalent model and limit for the SOI lateral power device using high-k dielectric by Jiafei Yao, Yufeng Guo, Yu Deng, Kemeng Yang, Man Li, Tian Xia

Extraction of Interface-Trap Densities of the Stacked Bonding Structure in 3D Integration Using High-Frequency Capacitance-Voltage Technique by Man Li, Yufeng Guo, Jiafei Yao, Jun Zhang, Fanyu Liu, Weihua Tang

An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method by Kemeng Yang, Yufeng Guo, Jun Zhang, Jiafei Yao, Man Li, Ling Du, Xiaoming Huang

Automatic optimal design of field plate for silicon on insulator lateral double‐diffused metal oxide semiconductor using simulated annealing algorithm by Jing Chen, Renji Xia, Jinwen You, Qing Yao, Yuxuan Dai, Jun Zhang, Jiafei Yao, Yufeng Guo

Off-State Performance Characterization of an AlGaN/GaN Device via Artificial Neural Networks by Jing Chen, Yufeng Guo, Jun Zhang, Jianhua Liu, Qing Yao, Jiafei Yao, Maolin Zhang, Man Li

<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>-Based Power Devices: A Concise Review by Maolin Zhang, Zeng Liu, Lili Yang, Jiafei Yao, Jing Chen, Jun Zhang, Wei Wei, Yufeng Guo, Weihua Tang

Double dielectrics enhancement on the LDMOS using high-k field dielectric and low-k buried dielectric by Jiafei Yao, Xin Liu, Mingshun Sun, Tianci Xu, Man Li, Jing Chen, Maolin Zhang, Jun Zhang, Yufeng Guo

A Novel Step–Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance by Jianhua Liu, Yufeng Guo, Jun Zhang, Jiafei Yao, Man Li, Maolin Zhang, Jing Chen, Xiaoming Huang, Chenyang Huang

The role of even longitudinal electric field distribution in optimizing carrier transport efficiency of field-effect transistors by Maolin Zhang, Zeng Liu, Lili Yang, Jiafei Yao, Jing Chen, Jun Zhang, Wei Wei, Weihua Tang, Yufeng Guo

The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT by Jianhua Liu, Jun Zhang, Jiafei Yao, Man Li, Jing Chen, Maolin Zhang, Xiaoming Huang, Chenyang Huang, Weihua Tang, Yufeng Guo

SiC-on-insulator based lateral power device and it’ s analytical models by Jiafei Yao, Ang Li, Yuao Liu, Ziwei Hu, Man Li, Kemeng Yang, Jun Zhang, Jing Chen, Maolin Zhang, Yufeng Guo

Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network by Qing Yao, Yufeng Guo, Bo Zhang, Jing Chen, Jun Zhang, Maolin Zhang, Xiaobo Guo, Jiafei Yao, Weihua Tang, Jianhua Liu

A 121 A/cm<sup>2</sup> High Current Density Copolymer OSC-Based Thin-Film Power OFET With 300 V Off-State Breakdown Voltage by Fubin Wang, Jun Zhang, Hao Zhang, Lei Wang, Xin Wu, Haonan Lin, Jiayi Zhou, Yuhao Wang, Jiafei Yao, Jing Chen, Kemeng Yang, Man Li, Yufeng Guo

Impact Ionization Coefficient Prediction of a Lateral Power Device Using Deep Neural Network by Jingyu Cui, Linglin Ma, Yuxian Shi, Jinan Zhang, Yuxiang Liang, Jun Zhang, Haidong Wang, Qing Yao, Haonan Lin, Mengyang Li, Jiafei Yao, Maolin Zhang, Jing Chen, Man Li, Yufeng Guo

Search Tools: