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    In‐plane ferroelectrics enabling reduced hysteresis in monolayer MoS2 transistors

    In‐plane ferroelectrics enabling reduced hysteresis in monolayer MoS2 transistors by Mingxuan Yuan, Binbin Zhang, Jiliang Cai, Jiaqi Zhang, Yue Lu, Shuo Qiao, Kecheng Cao, Hao Deng, Qingqing Ji

    Published 2024-07-01
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