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  1. 1
    A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching

    A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching by Shengnan Zhu, Tianshi Liu, Junchong Fan, Arash Salemi, Marvin H. White, David Sheridan, Anant K. Agarwal

    Published 2022-09-01
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    Article
  2. 2
    Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs

    Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs by Shengnan Zhu, Tianshi Liu, Junchong Fan, Hema Lata Rao Maddi, Marvin H. White, Anant K. Agarwal

    Published 2022-08-01
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    Article

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