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Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study by Jun-Ho Lee, Jun-Hyeok Choi, Woo-Seok Kang, Dohyung Kim, Byoung-Gue Min, Dong Min Kang, Jung Han Choi, Hyun-Seok Kim
Published 2022-11-01
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Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study by Woo-Seok Kang, Jun-Hyeok Choi, Dohyung Kim, Ji-Hun Kim, Jun-Ho Lee, Byoung-Gue Min, Dong Min Kang, Jung Han Choi, Hyun-Seok Kim
Published 2023-12-01
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