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  1. 1
    Numerical analysis of the use of multiple inlet plates to improve the thickness uniformity of silicon epitaxial layers during atmospheric pressure chemical vapor deposition

    Numerical analysis of the use of multiple inlet plates to improve the thickness uniformity of silicon epitaxial layers during atmospheric pressure chemical vapor deposition por Ba-Phuoc Le, Jyh-Chen Chen, Chieh Hu, Wei-Jie Lin, Chun-Chin Tu, Liang-Chin Chen

    Publicado 2024-12-01
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    Artigo
  2. 2
    Numerical Simulation of the Effect of Heater Position on the Oxygen Concentration in the CZ Silicon Crystal Growth Process

    Numerical Simulation of the Effect of Heater Position on the Oxygen Concentration in the CZ Silicon Crystal Growth Process por Ying-Yang Teng, Jyh-Chen Chen, Chung-Wei Lu, Cheng-Chuan Huang, Wan-Ting Wun, Hsueh-I Chen, Chi-Yung Chen, Wen-Chieh Lan

    Publicado 2012-01-01
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    Artigo

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