Structural evolution and the role of dislocations in InGaAs island formation on GaAs (110) and (111)B surfaces by Lobo, C, Leon, R, Liao, Z, Stevens-Kalceff, M, Cockayne, D

Ordering, tunability, and stability in the formation of semiconductor quantum dots by Leon, R, Stevens-Kalceff, M, Zou, J, Lobo, C, Cockayne, D

Dislocation-induced changes in quantum dots: Step alignment and radiative emission by Leon, R, Okuno, J, Lawton, R, Stevens-Kalceff, M, Phillips, MR, Zou, J, Cockayne, D, Lobo, C

Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate by Kim, Y, Yuan, S, Leon, R, Jagadish, C, Gal, M, Johnston, M, Phillips, MR, Kalceff, M, Zou, J, Cockayne, D

V-grooved GaAs/AlGaAs quantum wires with side wall quantum wells intermixed by pulsed anodization and rapid thermal annealing by Kim, Y, Yuan, S, Leon, R, Clark, A, Jagadish, C, Johnston, M, Burke, P, Gal, M, Zou, J, Cockayne, D, Phillips, MR, Kalceff, M