Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD by Omar, Al-Zuhairi, Shuhaimi, Ahmad, Makinudin, Abdullah Haaziq Ahmad, Abdul Khudus, Muhammad Imran Mustafa, Azman, Adreen, Kamarundzaman, Anas, Supangat, Azzuliani

Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology by Azman, Adreen, Shuhaimi, Ahmad, Omar, Al-Zuhairi, Kamarundzaman, Anas, Abdul Khudus, Muhammad Imran Mustafa, Ariff, Azharul, Samsudin, M.E.A., Zainal, Norzaini, Rahman, Saadah Abdul