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Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics by Yu-De Lin, Pang-Shiu Chen, Heng-Yuan Lee, Yu-Sheng Chen, Sk. Ziaur Rahaman, Kan-Hsueh Tsai, Chien-Hua Hsu, Wei-Su Chen, Pei-Hua Wang, Ya-Chin King, Chrong Jung Lin
Published 2017-06-01
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